Journal of Scientific Engineering Advances

Abstract

Wurtzite InGaN solid solutions have been designed with indium’s incorporation into GaN crystal. In this work, electronic structure and optical properties have been theoretically investigated in order to improve the optoelectronic performance of GaN semiconducting material. Lattice parameters of title materials have been provided, which shows very good agreement with experimental values, thereby making them a good choice for further studies, including delving into optical properties. It is found that the optical wavelength range has been enlarged when doping GaN with indium and the increased proportion of indium makes absorption curves shift towards lower energies, which covers the whole visible light region. Because of excellent perfor mance of these materials, a lot of new applications can be expected in the near future.